PART |
Description |
Maker |
HAT1023R-EL-E HAT1023R |
7 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
INJ0002AC1 INJ0002AU1 INJ0002AX08 INJ0002AT2 INJ00 |
High speed switching Silicon P-channel MOSFET
|
Isahaya Electronics Corporation
|
INK0003AX08 INK0003AC1 INK0003AU1 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
ENA1198 SCH2408 |
350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
RJL5020DPK RJL5020DPK-00-T0 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
H5N6001P |
Silicon N-Channel MOSFET High-Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
RJL6020DPK RJL6020DPK-00-T0 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
H5N2305PF |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation.
|